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| PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 PACKAGE DIMENSIONS 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) QSC113 QSC114 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER 0.100 (2.54) NOM SCHEMATIC COLLECTOR 0.155 (3.94) 0.018 (0.46) SQ. (2X) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. EMITTER DESCRIPTION The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. FEATURES * Tight production distribution. * Steel lead frames for improved reliability in solder mounting. * Good optical-to-mechanical alignment. * Plastic package is infrared transparent black to attenuate visible light. * Mechanically and spectrally matched to the QECXXX LED. * Black plastic body allows easy recognition from LED. 2001 Fairchild Semiconductor Corporation DS300358 7/09/01 1 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW QSC113 QSC114 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. ! = 880 nm, AlGaAs. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA = 25C) SYMBOL MIN TYP MAX UNITS Peak Sensitivity Wavelength Reception Angle Collector-Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State On-State Collector QSC112 On-State On-State Collector QSC113 On-State On-State Collector QSC114 Saturation Voltage Rise Time Fall Time VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A Ee = 0.5 mW/cm2, VCE = 5 V(5) Ee = 0.5 mW/cm2, IC = 0.5 mA(5) VCC = 5 V, RL = 100 # IC = 2 mA !PS " ICEO BVCEO BVECO IC(ON) -- -- -- 30 5 1 2.40 4.00 -- -- -- 880 8 -- -- -- -- -- -- -- 5.0 5.0 -- -- 100 -- -- 4 9.60 -- 0.4 -- -- nm Deg. nA V V mA VCE(sat) tr tf V s www.fairchildsemi.com 2 OF 4 7/09/01 DS300358 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 Figure 1. Light Current vs. Radiant Intensity 102 QSC113 100 90 80 QSC114 VCE = 5V GaAs Light Source Figure 2. Angular Response Curve 110 70 60 50 40 30 20 10 0 1.0 IC(ON) - Light Current (mA) 120 130 101 140 150 160 170 180 1.0 10 -1 100 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0.1 1 Ee - Radiant Intensity (mW/cm ) 2 Figure 3. Dark Current vs. Collector - Emitter Voltage 101 101 Figure 4. Light Current vs. Collector - Emitter Voltage Ie = 1mW/cm 2 I CEO - Dark Current (nA) 100 I L - Normalized Light Current Ie = 0.5mW/cm 2 100 Ie = 0.2mW/cm 2 Ie = 0.1mW/cm 2 10-1 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25 oC 10-2 0.1 10 -2 10-3 0 5 10 15 20 25 30 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 Normalized to: VCE = 25V I CEO - Normalized Dark Current 103 TA = 25 C o VCE = 25V VCE = 10V 102 101 100 10-1 25 50 75 o 100 TA - Ambient Temperature ( C ) DS300358 7/09/01 3 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 QSC113 QSC114 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 2 OF 4 7/09/01 DS300358 |
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